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Viktor Belko

Belko Viktor Ivanovich

Position

Senior Lecturer, Department of Mathematical Modeling and Control, Belarusian State University
Research associate (part-time job) at the Research Laboratory of Modeling of Physical Processes, Research Institute for Applied Problems of Mathematics and Informatics

Curriculum Vitae

1982 – 1987: Student of Belarusian State University, Mathematical-Mechanical Department, Minsk
June 1987: M.S., Diploma with honour, Belarusian State University
(Diploma title «Simulation of dopant redistribution during ion implantation»)
1992 – 1996: time-part Ph.D. course, Belarusian State University, Faculty of Applied Mathematics, Minsk, Belarus
June 1998: Ph.D., Belarusian State University, Minsk, Belarus
(Ph.D. title: "Mathematical Simulation of Ion Implantation based on Numerical Solution of Transport Equations")
1987 – 1998: junior member of teaching, Mathematical Physics Department
1998 – 2007: Senior Lecturer, Mathematical Physics Department
Since 2007: Senior Lecturer, Department of Mathematical Modeling and Control

 Principal research interests:

  • The development of the simulation framework based on the method of molecular dynamics for theoretical investigations of the angular distributions of the ion beam sputtered atoms for silicon and germanium as sputtering targets;
  • Investigations of point defect clustering in silicon using kinetic Monte Carlo technique and diffusion-reaction equations approach;
  • The development of multiscale approach for simulation of the defect formation and evolution in silicon and silicon-germanium alloys;
  • The development of the modified Tersoff type interatomic potential for silicon carbide; parametrization of the empirical interatomic potential for germanium for the usage in simulations of ion implantation with the method of molecular dynamics;
  • Investigations of dose rate effect in ion-implanted silicon using molecular dynamics and continuum equations approach;
  • Investigations of types, energetics and diffusion parameters for point defects in ion-irradiated semiconductor crystals (SiC and Si); determination of stable configurations for small defect clusters in crystalline silicon;
  • The development of efficient numerical methods for the linearized Boltzmann equation and fast algorithms for the ion implantation simulation;
  • Analysis of the solvability of the boundary value problem for the transport equations with strong anisotropic cross sections;
  • The development of the efficient methods for numerical solving of the transport equation in staight-ahead approximation as well as simulation algorithms for the high energy ion implantation

List of publications

  1. V.E. Gusakov, V.I. Belko, N.N. Dorozhkin. Quantum-chemical study of initial stages  of germanium nanocluster growth on a free silicon surface // Proc. V International Conference «Actual Problems of Solid State Physics», Minsk, Belarus, October 18-21, 2011, V.1., pp. 198-200.
  2. V.I. Belko, V.E. Gusakov, N.N. Dorozhkin. Multi-scale modeling of self-defect cluster formation in silicon // Proc. IX International Conference on Radiation-Solid Interactions, Minsk, Belarus, September 20-22, 2011, pp. 297-299.
  3. A. Burenkov, M. Sekowski, V. Belko, H. Ryssel. Angular distributions of sputtered silicon at grazing gallium ion beam incidence // Nucl. Instrum. Meth. Phys. Research B, 2012 (in Press; doi:10.1016/j.nimb.2011.01.025)
  4. V.I. Belko, V.E. Gusakov, N.N. Dorozhkin. Potential EDIP for germanium: parameterization and molecular dynamics simulation of point defects // Proc. IV International Conference «Materials and Structures of Modern Electronics». Minsk, Belarus, September 23-24, 2010. – pp. 15-18.
  5. V.I. Belko. Molecular dynamics packages in a course “Mathematical modeling in microelectronics” // Proc. IV International Conference “Information Systems and Technologies (IST’2010)”. Belarus, November 24-25, 2010.
  6. V.E. Gusakov, V.I. Belko, N.N. Dorozhkin. Formation and Diffusion of Self- Interstitial Atoms in Silicon Crystal under Hydrostatic Pressure: Quantum-chemical Simulations // Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. V. 3, No. 4, 2009, pp. 634–638.
  7. V.E. Gusakov, V.I. Belko, N.N. Dorozhkin. Effect of Hydrostatic Pressure on Self-interstitial Diffusion in Si, Ge, Si<Ge> Crystals: Quantum-chemical Simulations // Solid State Phenomena. V. 131-133, 2008. – P.271-275.
  8. V.I. Belko, V.A. Borodin, V.E. Gusakov, N.N. Dorozhkin.  Simulation of defect formation in ion-implanted Si using a Monte Carlo approach // III International Conference «Materials and Structures of Modern Electronics». Minsk, Belarus, September 25-26, 2008. – P. 22.
  9. V.I. Belko, L.F. Zimyanin, O.M. Kondratjeva. Simulations of self-defects in Si using parallel version of molecular dynamics // International Conference on Modern Computer Informational Technologies “mcIT-2008”. Grodno, Belarus, April 21-24, 2008. – P. 173-176.
  10. V.E. Gusakov, V.I. Belko, N.N. Dorozhkin. Effect of Hydrostatic Pressure on Self-interstitial Diffusion in Si, Ge, Si<Ge> Crystals: Quantum-chemical Simulations // Proc. Int. Conf. GADEST’07 (Gettering and Defect Engineering in Semiconductors Technology) Italy, Erice, October 14-19, 2007.
  11. V.I. Belko, A. Kuznetsov.  Frenkel pair accumulation in ion- and  electron-irradiated SiC// Nucl. Instr. and Meth. Phys. Research B. V.248/1, 2006. – P.77-83.
  12. F. Gao, M. Posselt, V.I. Belko, Y. Zhang, W. J. Weber. Structures and energetics of defects: a comparative study of 3C- and 4H-SiC // Nucl. Instr. Meth. Phys. Research B. V.218, 2004. – P.74-79.
  13. F. Gao, W. J. Weber, M. Posselt, V.I. Belko. Atomic Computer Simulations of Defect Migrations in 3C- and 4H-SiC // Materials Science Forum. V. 457-460, 2004. – P. 457-462.
  14. F. Gao, W. J. Weber, M. Posselt, V.I. Belko. Atomistic study of intrinsic defect migrations in 3C-SiC // Phys. Rev. B. V. 69, 2004. – P. 245205, 1-5.
  15. M. Posselt, F. Gao, W.J Weber, V.I. Belko. A comparative study of the structure and energetics of elementary defects in 3C- and 4H-SiC // J. Phys.: Condens. Matter. V. 16, 2004. – P. 1307-1323.
  16.  V.I. Belko, M. Posselt, E. Chagarov. Improvement of the repulsive part of the classical interatomic potential for SiC // Nucl. Instr. and Meth. in Phys. Research B. V.202, 2003. – P. 18-23.
  17. M. Posselt, V.Belko. Molecular Dynamics Study of Atomic Displacements and Subsequent Lattice Relaxation in 3C- and 4H-SiC // European Conference on Silicon Carbide and Related Materials (ECSCRM 2002, Session: Defects), Linkoeping, Sweden, September 1-5, 2002.
  18. V.I. Belko, M. Posselt, E. Chagarov. Improvement of the repulsive part of the classical interatomic potential for SiC // 6th Int.Conf. on Computer Simulation of Radiation Effects in Solids (COSIRES 2002). Dresden, Germany, June 23-27, 2002.
  19. M. Posselt, F. Gao, V.I. Belko, W.J Weber. Structure and energetics of elementary defects in 4H-SiC // 6th Int.Conf. on Computer Simulation of Radiation  Effects in Solids (COSIRES 2002). Dresden, Germany, June 23-27, 2002.
  20. M. Posselt, V.I. Belko, E. Chagarov. Influence of polytypism on elementary processes of ion-beam-induced defect production in SiC // Nucl. Instr. and Meth. in Phys. Research B. V. 180, 2001, P.17-23.
  21. M. Posselt, V.I. Belko. Influence of polytypism on elementary processes of ion-beam-induced defect production in SiC // 5th International Conference on Computer Simulation of Radiation Effects in Solids (COSIRES’00). The Penn State University, State College, Pennsylvania, July 24-28, 2000. – P.24.
  22.  V.I. Belko. The transport equation application for high dose ion implantation simulation // 8th Belarussian Math. Conference, Minsk, Belarus, September 23-27, 2000. – P.50.
  23. V.I. Belko, M. Posselt. Classical MD simulations of atomic displacements in 4H-, 6H- and 3C-SiC // E-MRS 1999 Spring Meeting, Strasburg, France, June 1-4, 1999. – P.268.
  24. V.I. Belko, F.F. Komarov, I.E. Mozolevski Ion implantation simulation in multilayered targets. // Microelectronica. V. 27,  No. 2, 1998, pp.120-124.
  25. V.I. Belko, I.E. Mozolevski High-energy ion implantation simulation based on numerical solution of the Boltzmann transport equation // Nucl. Instr. and Meth. in Phys. Research B. V. 95, 1995, pp. 17-23.
  26. V.I. Belko, I.E. Mozolevski. Mathematical simulation of ion implantation in multilayered multi-component targets// Proc. Scientific Conference “Discrete System Design Automation”. – Minsk, 1995. – P.83.
  27. V.I. Belko, I.E. Mozolevski. High-energy ion implantation simulation using Boltzmann equation // Poverkhnost, 1994. – N 4. – P. 40-48.
  28. V.I. Belko, F.F. Komarov, I.E. Mozolevski. Angular and energy distribution of the ion flow in target during ion implantation // XXII Meeting on Charged-particles-crystal Interactions. – Moscow, Russia, 1992 – P.69.
  29.  V.I. Belko, I.E. Mozolevski. High-energy ion implantation simulation based on Fokker-Planck and Boltzmann equation // Proc. Scientific Conference “Data Analysis and Modeling”. Minsk, Belarus, 1992. – P.37.
  30. V.I. Belko, E.B. Boiko, A.F. Burenkov, I.E. Mozolevski. Angular and energy distribution of the ion flow in target during ion implantation // Poverkhnost. – 1992. – No. 10-11. – pp. 89-94.

 

Teaching

Undergraduate courses:

  • Functional analysis and integral equations

Specialization courses:

  • Mathematical modeling of ion implantation
  • Molecular dynamics applications for simulations in microelectronics

Contact

Belko Viktor Ivanovich
Belarusian State University
Nezavisimosti ave., 4
220030 Minsk
+375172095538
belko@bsu.by