
Belko Viktor Ivanovich
Position
Senior Lecturer, Department of Mathematical Modeling and Control, Belarusian State University
Research associate (parttime job) at the Research Laboratory of Modeling of Physical Processes, Research Institute for Applied Problems of Mathematics and Informatics
Curriculum Vitae
1982 – 1987: Student of Belarusian State University, MathematicalMechanical Department, Minsk
June 1987: M.S., Diploma with honour, Belarusian State University
(Diploma title «Simulation of dopant redistribution during ion implantation»)
1992 – 1996: timepart Ph.D. course, Belarusian State University, Faculty of Applied Mathematics, Minsk, Belarus
June 1998: Ph.D., Belarusian State University, Minsk, Belarus
(Ph.D. title: "Mathematical Simulation of Ion Implantation based on Numerical Solution of Transport Equations")
1987 – 1998: junior member of teaching, Mathematical Physics Department
1998 – 2007: Senior Lecturer, Mathematical Physics Department
Since 2007: Senior Lecturer, Department of Mathematical Modeling and Control
Principal research interests:
 The development of the simulation framework based on the method of molecular dynamics for theoretical investigations of the angular distributions of the ion beam sputtered atoms for silicon and germanium as sputtering targets;
 Investigations of point defect clustering in silicon using kinetic Monte Carlo technique and diffusionreaction equations approach;
 The development of multiscale approach for simulation of the defect formation and evolution in silicon and silicongermanium alloys;
 The development of the modified Tersoff type interatomic potential for silicon carbide; parametrization of the empirical interatomic potential for germanium for the usage in simulations of ion implantation with the method of molecular dynamics;
 Investigations of dose rate effect in ionimplanted silicon using molecular dynamics and continuum equations approach;
 Investigations of types, energetics and diffusion parameters for point defects in ionirradiated semiconductor crystals (SiC and Si); determination of stable configurations for small defect clusters in crystalline silicon;
 The development of efficient numerical methods for the linearized Boltzmann equation and fast algorithms for the ion implantation simulation;
 Analysis of the solvability of the boundary value problem for the transport equations with strong anisotropic cross sections;
 The development of the efficient methods for numerical solving of the transport equation in staightahead approximation as well as simulation algorithms for the high energy ion implantation
List of publications
 V.E. Gusakov, V.I. Belko, N.N. Dorozhkin. Quantumchemical study of initial stages of germanium nanocluster growth on a free silicon surface // Proc. V International Conference «Actual Problems of Solid State Physics», Minsk, Belarus, October 1821, 2011, V.1., pp. 198200.
 V.I. Belko, V.E. Gusakov, N.N. Dorozhkin. Multiscale modeling of selfdefect cluster formation in silicon // Proc. IX International Conference on RadiationSolid Interactions, Minsk, Belarus, September 2022, 2011, pp. 297299.
 A. Burenkov, M. Sekowski, V. Belko, H. Ryssel. Angular distributions of sputtered silicon at grazing gallium ion beam incidence // Nucl. Instrum. Meth. Phys. Research B, 2012 (in Press; doi:10.1016/j.nimb.2011.01.025)
 V.I. Belko, V.E. Gusakov, N.N. Dorozhkin. Potential EDIP for germanium: parameterization and molecular dynamics simulation of point defects // Proc. IV International Conference «Materials and Structures of Modern Electronics». Minsk, Belarus, September 2324, 2010. – pp. 1518.
 V.I. Belko. Molecular dynamics packages in a course “Mathematical modeling in microelectronics” // Proc. IV International Conference “Information Systems and Technologies (IST’2010)”. Belarus, November 2425, 2010.
 V.E. Gusakov, V.I. Belko, N.N. Dorozhkin. Formation and Diffusion of Self Interstitial Atoms in Silicon Crystal under Hydrostatic Pressure: Quantumchemical Simulations // Journal of Surface Investigation. Xray, Synchrotron and Neutron Techniques. V. 3, No. 4, 2009, pp. 634–638.
 V.E. Gusakov, V.I. Belko, N.N. Dorozhkin. Effect of Hydrostatic Pressure on Selfinterstitial Diffusion in Si, Ge, Si<Ge> Crystals: Quantumchemical Simulations // Solid State Phenomena. V. 131133, 2008. – P.271275.
 V.I. Belko, V.A. Borodin, V.E. Gusakov, N.N. Dorozhkin. Simulation of defect formation in ionimplanted Si using a Monte Carlo approach // III International Conference «Materials and Structures of Modern Electronics». Minsk, Belarus, September 2526, 2008. – P. 22.
 V.I. Belko, L.F. Zimyanin, O.M. Kondratjeva. Simulations of selfdefects in Si using parallel version of molecular dynamics // International Conference on Modern Computer Informational Technologies “mcIT2008”. Grodno, Belarus, April 2124, 2008. – P. 173176.
 V.E. Gusakov, V.I. Belko, N.N. Dorozhkin. Effect of Hydrostatic Pressure on Selfinterstitial Diffusion in Si, Ge, Si<Ge> Crystals: Quantumchemical Simulations // Proc. Int. Conf. GADEST’07 (Gettering and Defect Engineering in Semiconductors Technology) Italy, Erice, October 1419, 2007.
 V.I. Belko, A. Kuznetsov. Frenkel pair accumulation in ion and electronirradiated SiC// Nucl. Instr. and Meth. Phys. Research B. V.248/1, 2006. – P.7783.
 F. Gao, M. Posselt, V.I. Belko, Y. Zhang, W. J. Weber. Structures and energetics of defects: a comparative study of 3C and 4HSiC // Nucl. Instr. Meth. Phys. Research B. V.218, 2004. – P.7479.
 F. Gao, W. J. Weber, M. Posselt, V.I. Belko. Atomic Computer Simulations of Defect Migrations in 3C and 4HSiC // Materials Science Forum. V. 457460, 2004. – P. 457462.
 F. Gao, W. J. Weber, M. Posselt, V.I. Belko. Atomistic study of intrinsic defect migrations in 3CSiC // Phys. Rev. B. V. 69, 2004. – P. 245205, 15.
 M. Posselt, F. Gao, W.J Weber, V.I. Belko. A comparative study of the structure and energetics of elementary defects in 3C and 4HSiC // J. Phys.: Condens. Matter. V. 16, 2004. – P. 13071323.
 V.I. Belko, M. Posselt, E. Chagarov. Improvement of the repulsive part of the classical interatomic potential for SiC // Nucl. Instr. and Meth. in Phys. Research B. V.202, 2003. – P. 1823.
 M. Posselt, V.Belko. Molecular Dynamics Study of Atomic Displacements and Subsequent Lattice Relaxation in 3C and 4HSiC // European Conference on Silicon Carbide and Related Materials (ECSCRM 2002, Session: Defects), Linkoeping, Sweden, September 15, 2002.
 V.I. Belko, M. Posselt, E. Chagarov. Improvement of the repulsive part of the classical interatomic potential for SiC // 6th Int.Conf. on Computer Simulation of Radiation Effects in Solids (COSIRES 2002). Dresden, Germany, June 2327, 2002.
 M. Posselt, F. Gao, V.I. Belko, W.J Weber. Structure and energetics of elementary defects in 4HSiC // 6th Int.Conf. on Computer Simulation of Radiation Effects in Solids (COSIRES 2002). Dresden, Germany, June 2327, 2002.
 M. Posselt, V.I. Belko, E. Chagarov. Influence of polytypism on elementary processes of ionbeaminduced defect production in SiC // Nucl. Instr. and Meth. in Phys. Research B. V. 180, 2001, P.1723.
 M. Posselt, V.I. Belko. Influence of polytypism on elementary processes of ionbeaminduced defect production in SiC // 5th International Conference on Computer Simulation of Radiation Effects in Solids (COSIRES’00). The Penn State University, State College, Pennsylvania, July 2428, 2000. – P.24.
 V.I. Belko. The transport equation application for high dose ion implantation simulation // 8th Belarussian Math. Conference, Minsk, Belarus, September 2327, 2000. – P.50.
 V.I. Belko, M. Posselt. Classical MD simulations of atomic displacements in 4H, 6H and 3CSiC // EMRS 1999 Spring Meeting, Strasburg, France, June 14, 1999. – P.268.
 V.I. Belko, F.F. Komarov, I.E. Mozolevski Ion implantation simulation in multilayered targets. // Microelectronica. V. 27, No. 2, 1998, pp.120124.
 V.I. Belko, I.E. Mozolevski Highenergy ion implantation simulation based on numerical solution of the Boltzmann transport equation // Nucl. Instr. and Meth. in Phys. Research B. V. 95, 1995, pp. 1723.
 V.I. Belko, I.E. Mozolevski. Mathematical simulation of ion implantation in multilayered multicomponent targets// Proc. Scientific Conference “Discrete System Design Automation”. – Minsk, 1995. – P.83.
 V.I. Belko, I.E. Mozolevski. Highenergy ion implantation simulation using Boltzmann equation // Poverkhnost, 1994. – N 4. – P. 4048.
 V.I. Belko, F.F. Komarov, I.E. Mozolevski. Angular and energy distribution of the ion flow in target during ion implantation // XXII Meeting on Chargedparticlescrystal Interactions. – Moscow, Russia, 1992 – P.69.
 V.I. Belko, I.E. Mozolevski. Highenergy ion implantation simulation based on FokkerPlanck and Boltzmann equation // Proc. Scientific Conference “Data Analysis and Modeling”. Minsk, Belarus, 1992. – P.37.
 V.I. Belko, E.B. Boiko, A.F. Burenkov, I.E. Mozolevski. Angular and energy distribution of the ion flow in target during ion implantation // Poverkhnost. – 1992. – No. 1011. – pp. 8994.
Teaching
Undergraduate courses:
 Functional analysis and integral equations
Specialization courses:
 Mathematical modeling of ion implantation
 Molecular dynamics applications for simulations in microelectronics
Contact
Belko Viktor Ivanovich
Belarusian State University
Nezavisimosti ave., 4
220030 Minsk
+375172095538
belko@bsu.by

